پيشنهاد و بررسي ساختارهاي جديد براي FET ساخته‌شده با نانوتيوب كربني
محورهای موضوعی : مهندسی برق و کامپیوتر
رحيم فائز
1
(دانشگاه صنعتي شريف)
سیدابراهیم حسینی
2
(دانشگاه تربیت معلم سبزوار)
کلید واژه: نانوتيوب كربنيمدار آنالوگبهبود منحني جريان- ولتاژCNT FET,
چکیده مقاله :
معادله جريان- ولتاژ براي يك ترانزيستور FET ساخته‌شده با نانوتيوب كربني معمولي با پیوند شاتكي سورس و درين مورد بررسي قرار گرفته و محدودیت‌های عملکرد آن در مدارهاي آنالوگ بررسی شده است. این بررسی نشان می‌دهد که ناحیه اشباع در مشخصه خروجی کوچک است. سپس چند ساختار جديد براي افزایش این ناحیه پيشنهاد شده و عملكرد آنها با هم مقايسه شده است.
A carbon nanotube field effect transistor (CNTFET) with Schottky contacts for the drain and the source has been investigated. It is shown that the saturation region of the transistor output characteristics is small. This limits the application of the transistor. To improve the saturation range in the output characteristics, new structures are proposed, and the simulation results are compared. The proposed structures have supperior output characteristics.
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